US1MHE3/61T datasheet

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О ДАТАШИТЕ

• Маркировка
  US1MHE3/61T
• Производитель
  General Semiconductor
• Описание
  Vishay Intertechnology US1MHE3/61T Capacitance @ Vr, F: - Configuration: Single Current - Average Rectified (io): 1A Current - Reverse Leakage @ Vr: 10?µA @ 1000V Diode Type: Standard Forward Continuous Current: 1 A Forward Current If(av): 1A Forward Surge Current Ifsm Max: 30A Forward Voltage Drop: 1.7 V Forward Voltage Vf Max: 1.7V ID_COMPONENTS: 2658144 Max Surge Current: 30 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Product: Ultra Fast Recovery Rectifier Recovery Time: 75 ns Repetitive Reverse Voltage Vrrm Max: 1kV Reverse Current Ir: 10 uA Reverse Recovery Time (trr): 75ns Reverse Recovery Time Trr Max: 75ns Reverse Voltage: 1000 V Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 1000V (1kV) Voltage - Forward (vf) (max) @ If: 1.7V @ 1A
• Количество страниц
  5 шт.
• Форматы файла
  HTML, PDF

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